kw.\*:("Programme CADDET")
Results 1 to 2 of 2
Selection :
Universality of mobility-gate field characteristics of electrons in the inversion charge layer and its application in MOSFET modelingSHIUH-WUU LEE.IEEE transactions on computer-aided design of integrated circuits and systems. 1989, Vol 8, Num 7, pp 724-730, issn 0278-0070Article
Constraints on the application of 0.5-μm MOSFET's to ULSI systemsTAKEDA, E; JONES, G. A. C; AHMED, H et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 2, pp 322-327, issn 0018-9383Article